Electrical properties and defect model of tin-doped indium oxide layers
Identifieur interne : 000801 ( Main/Exploration ); précédent : 000800; suivant : 000802Electrical properties and defect model of tin-doped indium oxide layers
Auteurs : RBID : ISTEX:339_1982_Article_BF00619080.pdfEnglish descriptors
Abstract
Tin-doped In2O3 layers were prepared by the spray technique with doping concentrationscSn between 1 and 20 at. % and annealed at 500 °C in gas atmospheres of varying oxygen partial pressures. The room-temperature electrical properties were measured. Maximum carrier concentrationsN=1.5×1021cm−3 and minimum resistivities ϱ=1.3×10−4 Ω cm are obtained if the layers are doped withcSn≈9 at. % and annealed in an atmosphere of oxygen partial pressurepO2 ⋦10−20 bar. At fixed doping concentration, the carrier mobility increases with decreasing oxygen pressure. The maximum obtainable mobility can be described in terms of electron scattering by ionized impurities. From an analysis of the carrier concentration and additional precision measurements of the lattice constants and film thicknesses, a defect model for In2O3:Sn is developed. This comprises two kinds of interstitial oxygen, one of which is loosely bound to tin, the other forming a strongly bound Sn2O4 complex. At low doping concentrationcSn≲4 at. % the carrier concentration is governed by the loosely bound tin-oxygen defects which decompose if the oxygen partial pressure is low. The carrier concentration follows from a relationN=K1 ·pO2−1/8 ·(3 ×1010 × cSn −N)1/4 with an equilibrium constantK1=1.4×1015 cm−9/4bar1/8, determined from our measurements.
DOI: 10.1007/BF00619080
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Germany</mods:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>Philips GmbH Forschungslaboratorium Aachen, D-5100, Aachen</wicri:regionArea><placeName><region type="land" nuts="1">Rhénanie-du-Nord-Westphalie</region><region type="district" nuts="2">District de Cologne</region><settlement type="city">Aix-la-Chapelle</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:339_1982_Article_BF00619080.pdf</idno><date when="1982">1982</date><idno type="doi">10.1007/BF00619080</idno><idno type="wicri:Area/Main/Corpus">000767</idno><idno type="wicri:Area/Main/Curation">000767</idno><idno type="wicri:Area/Main/Exploration">000801</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>73.60. Fw</term><term>81.40. Rs</term><term>82.60. Hc</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">Tin-doped In2O3 layers were prepared by the spray technique with doping concentrationscSn between 1 and 20 at. % and annealed at 500 °C in gas atmospheres of varying oxygen partial pressures. The room-temperature electrical properties were measured. Maximum carrier concentrationsN=1.5×1021cm−3 and minimum resistivities ϱ=1.3×10−4 Ω cm are obtained if the layers are doped withcSn≈9 at. % and annealed in an atmosphere of oxygen partial pressurepO2 ⋦10−20 bar. At fixed doping concentration, the carrier mobility increases with decreasing oxygen pressure. The maximum obtainable mobility can be described in terms of electron scattering by ionized impurities. From an analysis of the carrier concentration and additional precision measurements of the lattice constants and film thicknesses, a defect model for In2O3:Sn is developed. This comprises two kinds of interstitial oxygen, one of which is loosely bound to tin, the other forming a strongly bound Sn2O4 complex. At low doping concentrationcSn≲4 at. % the carrier concentration is governed by the loosely bound tin-oxygen defects which decompose if the oxygen partial pressure is low. The carrier concentration follows from a relationN=K1 ·pO2−1/8 ·(3 ×1010 × cSn −N)1/4 with an equilibrium constantK1=1.4×1015 cm−9/4bar1/8, determined from our measurements.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="83c6ddcf9c33afdb04f77bba9a382f599f350b5d"><titleInfo lang="eng"><title>Electrical properties and defect model of tin-doped indium oxide layers</title></titleInfo><name type="personal"><namePart type="given">G.</namePart><namePart type="family">Frank</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Philips GmbH Forschungslaboratorium Aachen, D-5100, Aachen, Fed. Rep. Germany</affiliation></name><name type="personal"><namePart type="given">H.</namePart><namePart type="family">Köstlin</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Philips GmbH Forschungslaboratorium Aachen, D-5100, Aachen, Fed. Rep. Germany</affiliation></name><typeOfResource>text</typeOfResource><genre>Contributed Papers</genre><genre>Original Paper</genre><originInfo><publisher>Springer-Verlag, Berlin/Heidelberg</publisher><dateCreated encoding="w3cdtf">1981-10-05</dateCreated><dateCaptured encoding="w3cdtf">1982-01-11</dateCaptured><dateValid encoding="w3cdtf">2004-10-26</dateValid><copyrightDate encoding="w3cdtf">1982</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">Tin-doped In2O3 layers were prepared by the spray technique with doping concentrationscSn between 1 and 20 at. % and annealed at 500 °C in gas atmospheres of varying oxygen partial pressures. The room-temperature electrical properties were measured. Maximum carrier concentrationsN=1.5×1021cm−3 and minimum resistivities ϱ=1.3×10−4 Ω cm are obtained if the layers are doped withcSn≈9 at. % and annealed in an atmosphere of oxygen partial pressurepO2 ⋦10−20 bar. At fixed doping concentration, the carrier mobility increases with decreasing oxygen pressure. The maximum obtainable mobility can be described in terms of electron scattering by ionized impurities. From an analysis of the carrier concentration and additional precision measurements of the lattice constants and film thicknesses, a defect model for In2O3:Sn is developed. This comprises two kinds of interstitial oxygen, one of which is loosely bound to tin, the other forming a strongly bound Sn2O4 complex. At low doping concentrationcSn≲4 at. % the carrier concentration is governed by the loosely bound tin-oxygen defects which decompose if the oxygen partial pressure is low. The carrier concentration follows from a relationN=K1 ·pO2−1/8 ·(3 ×1010 × cSn −N)1/4 with an equilibrium constantK1=1.4×1015 cm−9/4bar1/8, determined from our measurements.</abstract><subject lang="eng"><genre>PACS</genre><topic>73.60. Fw</topic><topic>81.40. Rs</topic><topic>82.60. Hc</topic></subject><relatedItem type="series"><titleInfo type="abbreviated"><title>Appl. Phys. A</title></titleInfo><titleInfo><title>Applied Physics A</title><subTitle>Materials Science and Processing</subTitle><partNumber>Year: 1982</partNumber><partNumber>Volume: 27</partNumber><partNumber>Number: 4</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1982-04-01</dateIssued><copyrightDate encoding="w3cdtf">1982</copyrightDate></originInfo><subject usage="primary"><topic>Physics</topic><topic>Optical and Electronic Materials</topic><topic>Nanotechnology</topic><topic>Characterization and Evaluation Materials</topic><topic>Surfaces and Interfaces, Thin Films</topic><topic>Condensed Matter</topic><topic>Operating Procedures, Materials Treatment</topic></subject><identifier type="issn">0947-8396</identifier><identifier type="issn">Electronic: 1432-0630</identifier><identifier type="matrixNumber">339</identifier><identifier type="local">IssueArticleCount: 13</identifier><recordInfo><recordOrigin>Springer-Verlag, 1982</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF00619080</identifier><identifier type="matrixNumber">Art2</identifier><identifier type="local">BF00619080</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>197</start><end>206</end></extent></part><recordInfo><recordOrigin>Springer-Verlag, 1982</recordOrigin><recordIdentifier>339_1982_Article_BF00619080.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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